PART |
Description |
Maker |
FGA272-638G FGA303-638G FGAX600-638G FGA304-638G F |
272 POS 1.27MM BGA ADAPTER BGA272, IC SOCKET 303 POS 1.27MM BGA ADAPTER BGA303, IC SOCKET 600 POS 1.27MM BGA EXTRACTION ADAPTER BGA600, IC SOCKET 304 POS 1.27MM BGA ADAPTER BGA304, IC SOCKET 168 POS 1.27MM BGA EXTRACTION ADAPTER BGA168, IC SOCKET 304 POS 1.27MM BGA EXTRACTION ADAPTER 255 POS 1.27MM BGA EXTRACTION ADAPTER 357 POS 1.27MM BGA ADAPTER 560 POS 1.27MM BGA ADAPTER
|
Advanced Interconnections, Corp. ADVANCED INTERCONNECTIONS CORP
|
3-1640240-4 |
Matrix Series Ball Grid Array ( BGA ) Sockets; 2401 POSITION BGA SOCKET ASSEM ( Tyco Electronics )
|
Tyco Electronics
|
ELANSC520-100AC ELANSC520-100AI |
PLASTIC BGA, CAVITY UP(BGA)
|
ADVANCED MICRO DEVICES INC
|
FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IBM25PPC405GP-3BE266C IBM25PPC405GP-3EE200C IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|413PIN|PLASTIC MICROPROCESSOR|32-BIT|CMOS|BGA|456PIN|PLASTIC 微处理器| 32位|的CMOS | BGA封装| 456PIN |塑料
|
Jameco Electronics Mitel Networks, Corp.
|
IS61NVP51272-250B1 IS61NVP51272-250B1I IS61NVP1024 |
512K X 72 ZBT SRAM, 2.6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 1M X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 1M X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 512K X 72 ZBT SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
|
Integrated Silicon Solution, Inc.
|
FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UP |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
|
NEC, Corp.
|
EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119 256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
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